Bert Jongbloed
40Patents
5h-index
49Co-inventors
65Inventor score
Filing activity: Jul 14, 2011 → Jun 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9916980B1 | Method of forming a structure on a substrate | Chemistry; Metallurgy | 456 | Active |
| US9812320B1 | Method and apparatus for filling a gap | Electricity | 453 | Active |
| US9887082B1 | Method and apparatus for filling a gap | Electricity | 448 | Active |
| US9552979B2 | Cyclic aluminum nitride deposition in a batch reactor | Electricity | 39 | Active |
| US9576790B2 | Deposition of boron and carbon containing materials | Electricity | 6 | Active |
| US10954597B2 | Atomic layer deposition apparatus | Electricity | 5 | Active |
| US11088002B2 | Substrate rack and a substrate processing system and method | Electricity | 5 | Active |
| US9991139B2 | Modular vertical furnace processing system | Electricity | 3 | Active |
| US11230766B2 | Substrate processing apparatus and method | Electricity | 3 | Active |
| US11447861B2 | Sequential infiltration synthesis apparatus and a method of forming a patterned structure | Electricity | 2 | Active |
| US10343907B2 | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber | Electricity | 2 | Active |
| US11532757B2 | Deposition of charge trapping layers | Electricity | 1 | Active |
| US11629407B2 | Substrate processing apparatus and method for processing substrates | Electricity | 1 | Active |
| US10741385B2 | Method and apparatus for filling a gap | Electricity | 1 | Active |
| US9837281B2 | Cyclic doped aluminum nitride deposition | Electricity | 1 | Active |
| US11501968B2 | Method for providing a semiconductor device with silicon filled gaps | Electricity | 1 | Active |
| US10460932B2 | Semiconductor device with amorphous silicon filled gaps and methods for forming | Electricity | 1 | Active |
| US8652573B2 | Method of CVD-depositing a film having a substantially uniform film thickness | Chemistry; Metallurgy | 0 | Active |
| US9711351B2 | Process for densifying nitride film | Electricity | 0 | Active |
| US12077854B2 | Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas | Chemistry; Metallurgy | 0 | Active |
| US12351902B2 | Methods and systems for delivery of vanadium compounds | Chemistry; Metallurgy | 0 | Active |
| US11107676B2 | Method and apparatus for filling a gap | Electricity | 0 | Active |
| US11694892B2 | Method and apparatus for filling a gap | Electricity | 0 | Active |
| US11898243B2 | Method of forming vanadium nitride-containing layer | Electricity | 0 | Active |
| US11594450B2 | Method for forming a structure with a hole | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.