Semiconductor substrate supports with improved high temperature chucking
US11501993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2021/6015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.