Structure for radio frequency applications
US11502428B2 · kind B2 · utility
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5References
20Claims
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Assignee
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Key dates
| Filing date | May 25, 2021 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A structure for radiofrequency applications includes a high-resistivity support substrate having a front face defining a main plane, a charge-trapping layer disposed on the front face of the support substrate, a first dielectric layer disposed on the charge-trapping layer, an active layer disposed on the first dielectric layer, at least one buried electrode disposed above or in the charge-trapping layer. The buried electrode comprises a conductive layer and a second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.