Periodic write to improve data retention
US11508440B1 · kind B1 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2021 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | May 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory control method includes a step of writing, repeatedly to a nonvolatile memory cells. The method continues with detecting when writing reaches a writing threshold value. Upon reaching the writing threshold, the method continues with driving a charge to at least one parasitic area intermediate at least two charge storage areas of the nonvolatile memory cells to improve data retention in at least one of the at least two charge storage areas of the nonvolatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.