Patent · US Active

Semiconductor package and method

US11508656B2 · kind B2 · utility

7Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 28, 2021
Grant dateNov 22, 2022
Priority date
Expiry dateJun 28, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.