Low capacitance low RC wrap-around-contact
US11508823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Feb 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor is provided. The field effect transistor includes a first source/drain on a substrate, a second source/drain on the substrate, and a channel region between the first source/drain and the second source/drain. The field effect transistor further includes a metal liner on at least three sides of the first source/drain and/or the second source/drain, wherein the metal liner covers less than the full length of a sidewall of the first source/drain and/or the second source/drain. The field effect transistor further includes a metal-silicide between the metal liner and the first source/drain and/or the second source/drain, and a conductive contact on the metal liner on the first source/drain and/or the second source/drain, wherein the conductive contact is a conductive material different from the conductive material of the metal liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.