Selective silicon etch for gate all around transistors
US11508828B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
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Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jul 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.