Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance

US11508903B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Angeline Smith · Hillsboro, US
• Ian A. Young · Portland, US
• Kaan Oguz · Beaverton, US
• Sasikanth Manipatruni · Ithaca, US
• Christopher J. Wiegand · Portland, US
• Kevin P. O'Brien · Cincinnati, US
• Tofizur Rahman · Portland, US
• Noriyuki Sato · Hillsboro, US
• Benjamin Buford · Hillsboro, US
• Tanay Gosavi · Portland, US

Key dates

• Filing date: Jun 28, 2018
• Grant date: Nov 22, 2022
• Expiry date: Feb 23, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.