Chamfered silicon carbide substrate and method of chamfering

US11515140B2 · kind B2 · utility

Assignee

• SiCrystal GMBH · DE

Inventors

• Bernhard Ecker · Nuremberg, DE
• Ralf Müller · Geringswalde, DE
• Matthias Stockmeier · Egloffstein, DE
• Michael Vogel · Nuremberg, DE
• Arnd-Dietrich Weber · Forchheim, DE

Key dates

• Filing date: May 10, 2019
• Grant date: Nov 29, 2022
• Expiry date: May 10, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/219
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.