Methods and precursors for selective deposition of metal films
US11515151B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2018 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Oct 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.