Selective deposition of conductive cap for fully-aligned-via (FAV)
US11515203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Mar 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for selective deposition of conductive a cap for FAV features are described. In an embodiment, a method may include receiving a substrate having an interlayer dielectrics (ILD) layer, the ILD layer having a recess, the recess having a conductive layer formed therein, the conductive layer comprising a first conductive material. Additionally, such a method may include forming a cap within a region defined by the recess and in contact with a surface of the conductive layer, the cap comprising a second conductive material. The method may also include forming a conformal etch stop layer in contact with a surface of the cap and in contact with a region of the ILD layer. Further, the method may include selectively etching the etch stop layer using a plasma etch process, wherein the plasma etch process removes the etch stop layer selective to the second conductive material comprising the cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.