Patent · US Active

3D NAND structures with decreased pitch

US11515324B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Thomas Jongwan Kwon · Dublin, US
Xinhai Han · Santa Clara, US

Key dates

Filing date	Dec 19, 2019
Grant date	Nov 29, 2022
Priority date	—
Expiry date	May 13, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693

Abstract

Methods of forming 3D NAND devices are discussed. Some embodiments form 3D NAND devices with increased cell density. Some embodiments form 3D NAND devices with decreased vertical and/or later pitch between cells. Some embodiments form 3D NAND devices with smaller CD memory holes. Some embodiments form 3D NAND devices with silicon layer between alternating oxide and nitride materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.