Defect detection in memory based on active monitoring of read operations
US11520657B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Aug 18, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Aug 18, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/0793
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first error rate based on a first read operation performed on a memory device is obtained. An individual data unit of the memory device that satisfies a first threshold criterion associated with a defect candidate is determined. A defect verification operation on the individual data unit to obtain a second error rate is performed. The individual data unit that satisfies a second threshold criterion associated with a defect is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.