Memory with one-time programmable (OTP) cells and reading operations thereof
US11521692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Mar 18, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a plurality of one-time programmable (OTP) memory cells, wherein each OTP memory cell includes a corresponding storage element capable of being in a permanently blown state or non-blown state. In the non-blown state, the corresponding storage element is capable of being in a low conductive state (LCS) or high conductive state (HCS). Control circuitry is configured to, in response to a received read request having a corresponding access address which selects a set of OTP memory cells, direct write circuitry to apply a voltage differential across the corresponding storage element of each selected OTP memory cell sufficient to set the corresponding storage element to a predetermined one of the LCS or HCS, and, after the write circuitry applies the voltage differential across the corresponding storage element, direct read circuitry to read the selected OTP memory cells to output read data stored in the selected OTP memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.