In-situ deposition process
US11521849B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2019 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Apr 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.