Semiconductor device structure with serpentine conductive feature and method for forming the same
US11521926B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | May 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device structure with a serpentine conductive feature and a method for forming the semiconductor device structure. The semiconductor device structure includes a conductive pad disposed in a semiconductor substrate, and a first mask layer disposed over the semiconductor substrate. The semiconductor device structure also includes a second mask layer disposed over the first mask layer. The first mask layer and the second mask layer are made of different materials. The semiconductor device structure further includes a conductive feature penetrating through the first mask layer and the second mask layer to connect to the conductive pad. The conductive feature has a serpentine pattern in a top view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.