Multi-protrusion transfer gate structure
US11521997B2 · kind B2 · utility
1Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 16, 2020 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8023
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.