IC with matched thin film resistors

US11522043B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Scott Jessen · Allen, US
• Tae Seung Kim · Yongin-si, KR
• Steven Lee Prins · Fairview, US
• Can Duan · Richardson, US
• Abbas Ali · Plano, US
• Erich Wesley Kinder · Notre Dame, US

Key dates

• Filing date: Oct 30, 2020
• Grant date: Dec 6, 2022
• Expiry date: Mar 27, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating an integrated circuit (IC) includes forming a dielectric layer on a substrate having a plurality of the IC. A thin-film resistor (TFR) layer is deposited on the dielectric layer, and an underlayer (UL) including carbon is formed on the TFR layer. A hard mask layer including silicon is formed on the UL. Masked etching of the hard mask layer transfers a pattern of a photoresist layer onto the hard mask layer to form a hard mask layer pattern. Masked etching of the UL transfers the hard mask layer pattern onto the UL to form a UL pattern. Masked etching of the TFR layer transfers the UL pattern onto the TFR layer to form a TFR layer pattern including a matched pair of TFRs. The matched pair of TFRs are generally included in circuitry configured together for implementing at least one function.