Patent · US Active

Method for reading and writing and memory device

US11527301B2 · kind B2 · utility

7Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 8, 2021
Grant dateDec 13, 2022
Priority date
Expiry dateJun 8, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/1802
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, each of the plurality of memory bits being associated with a spare memory cell; and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.