Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices

US11527412B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Qintao Zhang · Mount Kisco, US
• Samphy Hong · Saratoga Springs, US
• David J. Lee · Poughkeepsie, US
• Felix Levitov · Ballston Lake, US
• Lei Zhong · Lo Wu, CN
• Wei Zou · Shanghai, CN

Key dates

• Filing date: Dec 6, 2020
• Grant date: Dec 13, 2022
• Expiry date: Aug 16, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for performing an ion implantation process including providing a hardmask layer disposed atop a substrate, providing a photoresist layer disposed atop the hardmask layer and defining a pattern exposing a portion of the hardmask layer, performing a room temperature ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the exposed portion of the hardmask layer to make the exposed portion more susceptible to ion etching or wet etching, performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate, and performing a high energy, hot ion implantation process wherein an ion beam formed of a ionized second dopant species is directed onto the exposed portion of the substrate.