Atomic layer deposition tool and method
US11530479B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2019 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2217/76
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.