Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit
US11531524B2 · kind B2 · utility
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Key dates
| Filing date | Jun 7, 2019 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Jul 7, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.
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