Structure and formation method of semiconductor device with conductive feature
US11532514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/535
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.