Source/drain contacts and methods of forming same
US11532713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2020 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Nov 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a device layer comprising a first transistor and a second transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure comprising a first dielectric layer on the backside of the device layer, wherein a semiconductor material is disposed between the first dielectric layer and a first source/drain region of the first transistor; a contact extending through the first dielectric layer to a second source/drain region of the second transistor; and a first conductive line electrically connected to the second source/drain region of the second transistor through the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.