Multi-zone heater model-based control in semiconductor manufacturing
US11533783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2019 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Nov 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.