Extreme ultraviolet mask blank hard mask materials
US11537040B2 · kind B2 · utility
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17References
20Claims
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Assignee
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Key dates
| Filing date | Jan 25, 2021 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Aug 28, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.