Cyclic plasma etching of carbon-containing materials
US11538692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2021 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Jul 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate includes performing a cyclic process including a plurality of cycles, where the cyclic process includes: forming, in a plasma processing chamber, a passivation layer over sidewalls of a recess in a carbon-containing layer, by exposing the substrate to a first gas including boron, silicon, or aluminum, the carbon-containing layer being disposed over a substrate, purging the plasma processing chamber with a second gas including a hydrogen-containing gas, an oxygen-containing gas, or molecular nitrogen, and exposing the substrate to a plasma generated from the second gas, where each cycle of the plurality of cycles extends the recess vertically into the carbon-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.