Inventor · Albany, NY, US

Mingmei Wang

22Patents
2h-index
35Co-inventors
53Inventor score

Filing activity: Jul 31, 2012 → Oct 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9768033B2 Methods for high precision etching of substrates Electricity 27 Active
US8916472B2 Interconnect formation using a sidewall mask layer Electricity 4 Active
US10211065B2 Methods for high precision plasma etching of substrates Electricity 2 Active
US9401263B2 Feature etching using varying supply of power pulses Electricity 1 Active
US11024508B2 Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching Electricity 1 Active
US10483127B2 Methods for high precision plasma etching of substrates Electricity 1 Active
US9881807B2 Method for atomic layer etching Electricity 1 Active
US12131914B2 Selective etching with fluorine, oxygen and noble gas containing plasmas Electricity 0 Active
US11158517B2 Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing Electricity 0 Active
US10490404B2 Method of in situ hard mask removal Electricity 0 Active
US11804380B2 High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation Electricity 0 Active
US11887815B2 Plasma processing system and method using radio frequency (RF) and microwave power Electricity 0 Active
US11152217B2 Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition Electricity 0 Active
US12424447B2 Method to selectively etch silicon nitride to silicon oxide using water crystallization Electricity 0 Active
US12131887B2 Plasma processing system and method using radio frequency and microwave power Electricity 0 Active
US12308212B2 In-situ adsorbate formation for plasma etch process Electricity 0 Active
US11538692B2 Cyclic plasma etching of carbon-containing materials Electricity 0 Active
US11837471B2 Methods of patterning small features Physics 0 Active
US12400863B2 Method for etching for semiconductor fabrication Electricity 0 Active
US11232954B2 Sidewall protection layer formation for substrate processing Electricity 0 Active
US11189499B2 Atomic layer etch (ALE) of tungsten or other metal layers Electricity 0 Active
US12237172B2 Etch process for oxide of alkaline earth metal Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.