Semiconductor image sensor device and fabrication method thereof
US11538844B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Jan 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer, first self-aligned silicide layer on the polysilicon plug and first conductive metal layer on the first self-aligned silicide layer; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in first ILD layer, second self-aligned silicide layer on the second polysilicon plug, and second conductive metal layer on the second self-aligned silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.