Composition for forming resist underlayer film and method for forming resist pattern using same
US11542366B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Oct 14, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Jul 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent:wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.