Patent · US Active

Physical vapor deposition system and processes

US11542595B2 · kind B2 · utility

0Cited by
16References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 26, 2020
Grant dateJan 3, 2023
Priority date
Expiry dateFeb 26, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02266
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.