Patent · US Active

Memory device with dynamic storage mode control

US11544188B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Yun Li · Fremont, US
Kishore Kumar Muchherla · Fremont, US
Peter Feeley · Boise, US
Ashutosh Malshe · Fremont, US
Daniel J. Hubbard · Boise, US
Christopher S. Hale · Boise, US
Kevin R. Brandt · Boise, US
Sampath K. Ratnam · Boise, US

Key dates

Filing date	Mar 9, 2021
Grant date	Jan 3, 2023
Priority date	—
Expiry date	Mar 9, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG06F2212/7205
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.