Ferroelectric field effect transistors having enhanced memory window and methods of making the same

US11545506B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Bhagwati Prasad · San Jose, US
• Joyeeta Nag · Wappingers Falls, US
• Seung-Yeul Yang · Pleasanton, US
• Adarsh Rajashekhar · Santa Clara, US
• Raghuveer S. Makala · Campbell, US

Key dates

• Filing date: Nov 13, 2020
• Grant date: Jan 3, 2023
• Expiry date: Nov 19, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B51/50

Abstract

A ferroelectric transistor includes a semiconductor channel comprising a semiconductor material, a strained and/or defect containing ferroelectric gate dielectric layer located on a surface of the semiconductor channel, a source region located on a first end portion of the semiconductor channel, and a drain region located on a second end portion of the semiconductor channel.