Selector transistor with continuously variable current drive
US11545524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
A magnetic memory structure that includes a two-terminal resistive memory element electrically connected with a selector structure. The selector structure includes a semiconductor pillar structure formed on a semiconductor substrate. The selector structure is surrounded by a gate dielectric layer, and the semiconductor pillar structure and gate dielectric layer are surrounded by an electrically conductive gate structure. The semiconductor pillar has first and second dimensions in a plane parallel with the surface of the semiconductor substrate that are unequal with one another. The semiconductor pillar structure can have a cross-section parallel with the semiconductor substrate surface that is in the shape of a: rectangle; oval elongated polygon, etc. The length of the longer dimension can be adjusted to provide a desired amount of current though the semiconductor pillar structure to drive the two-terminal resistive memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.