High-voltage devices integrated on semiconductor-on-insulator substrate
US11545570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Feb 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
The present disclosure generally to semiconductor devices, and more particularly to semiconductor devices having high-voltage transistors integrated on a semiconductor-on-insulator substrate and methods of forming the same. The present disclosure provides a semiconductor device including a semiconductor-on-insulator (SOI) substrate having a semiconductor layer, a bulk substrate and an insulating layer between the semiconductor layer and the bulk substrate, a source region and a drain region disposed on the bulk substrate, an isolation structure extending through the insulating layer and the semiconductor layer and terminates in the bulk substrate, and a gate structure between the source region and the drain region, the gate structure is disposed on the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.