Methods of manufacture precessional spin current magnetic tunnel junction devices
US11545620B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Aug 18, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Oct 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Ru) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.