Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
US11549181B2 · kind B2 · utility
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Key dates
| Filing date | Sep 19, 2019 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jan 4, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.