Methods of forming a microelectronic device, and related systems and additional methods
US11551926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2021 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Mar 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.