Patent · US Active

PMOS high-K metal gates

US11552177B2 · kind B2 · utility

0Cited by

4References

7Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Srinivas Gandikota · Santa Clara, US
Steven C. H. Hung · Sunnyvale, US
Mandyam Sriram · Beaverton, US
Jacqueline S. Wrench · San Jose, US
Yixiong Yang · San Jose, US
Yong Yang · Boston, US

Key dates

Filing date	Sep 4, 2020
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Dec 18, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.