System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport

US11560643B2 · kind B2 · utility

Assignee

• SiCrystal GMBH · DE

Inventors

• Erwin Schmitt · Großenseebach, DE
• Michael Vogel · Nuremberg, DE

Key dates

• Filing date: Jun 5, 2020
• Grant date: Jan 24, 2023
• Expiry date: Jun 17, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B35/002
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.