Hydrogen management in plasma deposited films

US11562902B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Rui Cheng · San Jose, US
• Diwakar Kedlaya · San Jose, US
• Karthik Janakiraman · San Jose, US
• Gautam K. Hemani · San Jose, US
• Krishna Nittala · Sunnyvale, US
• Alicia J. Lustgraaf · Kuna, US
• Zubin Huang · Santa Clara, US
• Brett Spaulding · Boise, US
• Shashank Sharma · San Jose, US
• Kelvin Chan · San Ramon, US

Key dates

• Filing date: Jul 19, 2020
• Grant date: Jan 24, 2023
• Expiry date: Jul 19, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68764
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.