Krishna Nittala
19Patents
2h-index
49Co-inventors
50Inventor score
Filing activity: Aug 20, 2014 → Mar 15, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9245739B2 | Low-K oxide deposition by hydrolysis and condensation | Electricity | 14 | Active |
| US10490436B2 | Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films | Electricity | 3 | Active |
| US11721545B2 | Method of using dual frequency RF power in a process chamber | Electricity | 1 | Active |
| US11618949B2 | Methods to reduce material surface roughness | Electricity | 1 | Active |
| US11694902B2 | Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers | Electricity | 1 | Active |
| US11508611B2 | Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films | Electricity | 0 | Active |
| US11939674B2 | Methods to reduce material surface roughness | Electricity | 0 | Active |
| US11170990B2 | Polysilicon liners | Electricity | 0 | Active |
| US11443919B2 | Film formation via pulsed RF plasma | Electricity | 0 | Active |
| US12334358B2 | Integration processes utilizing boron-doped silicon materials | Electricity | 0 | Active |
| US12131913B2 | Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers | Electricity | 0 | Active |
| US11532525B2 | Controlling concentration profiles for deposited films using machine learning | Electricity | 0 | Active |
| US11562902B2 | Hydrogen management in plasma deposited films | Electricity | 0 | Active |
| US12106958B2 | Method of using dual frequency RF power in a process chamber | Electricity | 0 | Active |
| US11827514B2 | Amorphous silicon-based films resistant to crystallization | Chemistry; Metallurgy | 0 | Active |
| US11961739B2 | Boron concentration tunability in boron-silicon films | Electricity | 0 | Active |
| US11421324B2 | Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition | Electricity | 0 | Active |
| US11676813B2 | Doping semiconductor films | Electricity | 0 | Active |
| US12205818B2 | Boron concentration tunability in boron-silicon films | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.