Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same
US11563116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2021 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Apr 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/118
Abstract
A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.