Optoelectronic device comprising three-dimensional light-emitting diodes
US11563147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.