Area-selective atomic layer deposition of passivation layers
US11569088B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.