Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers
US11569181B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Dec 5, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Dec 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.