Image sensor having stress releasing structure and method of forming same
US11569289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2021 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Aug 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate having a pixel array region and a first seal ring region, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The semiconductor structure further includes a first isolation feature in the first seal ring region, wherein the first isolation feature is filled with a dielectric material, and the first isolation feature is a continuous structure surrounding the pixel array region. The semiconductor structure further includes a second isolation feature between the first isolation feature and the pixel array region, wherein the second isolation feature is filled with the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.