Gas dopant doped deep trench super junction high voltage MOSFET
US11569345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Nov 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing and a Super Junction MOSFET are disclosed. The Super Junction MOSFET comprises a lightly doped epitaxial layer of a first conductivity type on a heavily doped substrate of the first conductivity type. A deep trench is formed in the epitaxial layer. The deep trench having an insulating layer with a thickness gradient formed on surfaces of the deep trench. One or more regions of the epitaxial layer proximate to sidewalls of the deep trench is doped of a second conductivity type, wherein the second conductivity type is opposite the first conductivity type. Finally, MOSFET device structures are formed in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.