Lingbing Chen
5Patents
1h-index
10Co-inventors
40Inventor score
Filing activity: Feb 22, 2016 → May 4, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11031465B2 | Semiconductor device incorporating epitaxial layer field stop zone | Electricity | 1 | Active |
| US11569345B2 | Gas dopant doped deep trench super junction high voltage MOSFET | Electricity | 0 | Active |
| US9679822B1 | Method for monitoring epitaxial growth geometry shift | Electricity | 0 | Active |
| US11728423B2 | Integrated planar-trench gate power MOSFET | Electricity | 0 | Active |
| US11749716B2 | Semiconductor device incorporating epitaxial layer field stop zone | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.