Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes
US11573452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/307
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.